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M62032FP Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – VOLTAGE DETECTING, SYSTEM RESETTING IC
MITSUBISHI <STD-LINEAR>
M62032FP
VOLTAGE DETECTING, SYSTEM RESETTING IC
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
Symbol
Parameter
Conditions
Ratings
Unit
Vcc
ISINK
Vo
VRES
Pd
Ktheta
Topr
Tstg
Supply Voltage
Output Sink Current
Output Voltage
Self Reset Input Voltage
Power Dissipation
Thermal Derating
Operating Temperature
Storage Temperature
Ta ≥ 25°C
10
8.0
10
10
300
3.0
-20 to +75
-40 to +125
V
mA
V
V
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
<Reset circuit1>
Symbol
Parameter
Test Conditions
Min
Limits
Typ
Max
Unit
VS1
∆VS1
VIN
IIN
Detecting Voltage 1
Hysteresis Voltage 1
Input Voltage Range
Input Current
VCC ≤ 7V
VCC > 7V
VIN = 1.25V
1.20
9
-0.3
-0.3
1.25
15
100
1.30 V
23 mV
VCC
7.0
V
500 nA
IPD
Constant Current
-1
uA
VOL
Low Output Voltage 1 IOL = 5mA
0.2 0.4 V
tpd1
tpdmax
Delay Time
Maximum Delay Time
Cd = 0.01uF
Cd = 0.68uF
10
mS
680 1130
* The delay time can be varied by changing the connecting capacitance (Cd).
Tpd = CV/I = Cd x 1(V)/1(uA) = Cd x 1E6 (sec)
**When delay time setting goes over 100msec, add a condenser for chattering protection (0.01uF) to the output.
<Reset circuit2>
Symbol
Parameter
Test conditions
Min
Limits
Typ
Max Unit
VS2
∆VS2
VIN
IIN
Detecting Voltage2
Hysteresis Voltage2
Input Voltage Range
Input Current
VCC ≤ 7V
VCC > 7V
VIN = 1.25V
1.20
9
-0.3
-0.3
1.25
15
100
1.30 V
23 mV
VCC
7.0
V
500 nA
Common specification
Symbol
Parameter
Test conditions
VCC
ICC
VS/∆T
∆VS/∆T
TPLH/∆T
IOH
Supply Voltage Range
Circuit Current in OFF
Detecting Voltage Temperature
Coefficient
The Hysteresis Voltage
Temperature Coefficient
Propagation Delay Time
Temperature Coefficient
Output Leak Current
TPHL
Output "L" Propagation Delay Time
VOPL
Threshold Operating Voltage
VRESH
IRESH
VRESL
Self
reset
Input high voltage
Input high current
Input low voltage
VCC = 5V
CL = 100pF
RL = 2.2kΩ, VOL ≤ 0.4V
RL = 100kΩ, VOL ≤ 0.4V
VRES = 2V
Min
Limits
Typ
Max Unit
2
10
V
0.7
0.01
0.01
0.10
1.4 mA
%/°C
%/°C
%/°C
1 uA
10
µs
0.67
0.55
0.80
0.70
V
2
VCC
V
80 µA
-0.3
0.8 V
( 3 / 4)
1998.7.24- B