M5M5V108CFP-70H Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vcc
Supply voltage
VI
Input voltage
VO
Output voltage
Pd
Power dissipation
Topr
Operating temperature
Tstg
Storage temperature
* –3.0V in case of AC ( Pulse width ≤ 30ns )
MITSUBISHI LSIs
M5M5V108CFP,VP,RV,KV,KR -70H, -10H,
-70X, -10X
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
Conditions
With respect to GND
Ta=25°C
Ratings
– 0.3*~4.6
– 0.3*~Vcc + 0.3
(Max 4.6)
0~Vcc
700
0~70
– 65~150
Unit
V
V
V
mW
°C
°C
DC ELECTRICAL CHARACTERISTICS (Ta=0~70°C, Vcc=2.7~3.6V, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Unit
Min Typ Max
VIH
High-level input voltage
2.0
Vcc
+ 0.3
V
VIL
VOH1
Low-level input voltage
High-level output voltage 1 IOH= – 0.5mA
–0.3*
2.4
0.6
V
V
VOH2
High-level output voltage 2 IOH= – 0.05mA
Vcc
– 0.5
V
VOL
Low-level output voltage IOL= 2mA
II
Input current
VI=0~Vcc
IO
Output current in off-state
S1=VIH or S2=VIL or OE=VIH
VI/O=0~VCC
0.4
V
±1
µA
±1
µA
ICC1
Active supply current
ICC2
Active supply current
S1=VIL,S2=VIH,
other inputs=VIH or VIL
Output-open(duty 100%)
70ns
100ns
1MHz
35
30
mA
5
~25°C
1.2
ICC3
Stand-by current
1) S2 ≤ 0.2V
other inputs=0~VCC
2) S1 ≥ VCC–0.2V,
S2 ≥ VCC–0.2V
other inputs=0~VCC
-H ~40°C
~70°C
~25°C
-X ~40°C
3.6
12
µA
0.6
1.8
ICC4
Stand-by current
S1=VIH or S2=VIL,
other inputs=0~VCC
~70°C
4.8
0.33
mA
* –3.0V in case of AC ( Pulse width ≤ 30ns )
CAPACITANCE (Ta=0~70°C, unless otherwise noted)
Symbol
Parameter
CI
Input capacitance
CO
Output capacitance
Note 1: Direction for current flowing into an IC is positive (no mark).
2: Typical value is Vcc = 3V, Ta = 25°C
Test conditions
VI=GND, VI=25mVrms, f=1MHz
VO=GND,VO=25mVrms, f=1MHz
Limits
Min Typ Max
Unit
6
pF
10
pF
MITSUBISHI
3
ELECTRIC