M5M5256DFP-70VLL-W Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

'97.4.7
MITSUBISHI LSIs
M5M5256DFP,VP,RV -70VLL-W,-85VLL-W,
-70VXL-W,-85VXL-W
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vcc
Supply voltage
VI
Input voltage
VO
Output voltage
Pd
Power dissipation
Topr
Operating temperature
Tstg
Storage temperature
* -3.0V in case of AC ( Pulse width ≤ 30ns )
Conditions
With respect to GND
Ta=25°C
Ratings
Unit
-0.3*~4.6
V
-0.3*~Vcc+0.3
(Max 4.6)
V
0~Vcc
V
700
mW
-20~70
°C
-65~150
°C
DC ELECTRICAL CHARACTERISTICS (Ta=-20~70°C, Vcc=3.3±0.3V, unless otherwise noted)
Symbol
Parameter
VIH
High-level input voltage
Test conditions
Limits
Unit
Min Typ Max
2.0
Vcc
+0.3
V
VIL
Low-level input voltage
-0.3*
0.6
V
VOH1 High-level output voltage 1 IOH=-0.5mA
2.4
V
VOH2 High-level output voltage 2 IOH=-0.05mA
Vcc
-0.5
V
VOL
Low-level output voltage IOL=1mA
0.4
V
II
Input current
VI=0~Vcc
±1 uA
IO
Output current in off-state ^{/S=VIH or or /OE=VIH,}
VI/O=0~Vcc
Icc1
Active supply current
(AC, MOS level )
/S≤0.2V,
Min.
cycle
Other inputs<0.2V or >Vcc-0.2V
Output-open Min. cycle
1MHz
±1 uA
13 25
mA
1.5
3
Icc2
Active supply current
(AC, TTL level )
/S=VIL,
other inputs=VIH or VIL
Output-open Min. cycle
Min.
cycle
1MHz
14 25
mA
1.5
3
Icc3 Stand-by current
/S≥Vcc-0.2V,
other inputs=0~Vcc
-VLL
-VXL
12
uA
0.05 2.4
Icc4 Stand-by current
/S=VIH,other inputs=0~Vcc
0.33 mA
* -3.0V in case of AC ( Pulse width ≤ 30ns )
CAPACITANCE (Ta=-20~70°C, Vcc=3.3±0.3V, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Min Typ Max
Unit
CI
Input capacitance
CO
Output capacitance
VI=GND, VI=25mVrms, f=1MHz
VO=GND,VO=25mVrms, f=1MHz
6
pF
8
pF
Note 0: Direction for current flowing into an IC is positive (no mark).
1: Typical value is one at Ta = 25°C.
2: CI, CO are periodically sampled and are not 100% tested.
MITSUBISHI
ELECTRIC
3