M54587P Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
INPUT
PG
50Ω
VCC
VO
Measured
device
RL
OPEN
OUTPUT
CL
INPUT
50%
OUTPUT
50%
ton
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
VI = 0.4 ~ 4V
(2)Input-output conditions : RL = 30Ω, Vo = 10V, Vcc = 4V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes
50%
50%
toff
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
2.0
M54587P
1.5
M54587FP
1.0
0.5
0
0
25
50
75
100
Ambient temperature Ta (°C)
Duty Cycle-Collector Characteristics
(M54587P)
500
1
400
2
300
200
•The collector
current values
represent the current per circuit.
100 •Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Vcc = 5V •Ta = 25°C
0
0
20 40 60 80
3
4
5
6
7
8
100
Duty cycle (%)
Output Saturation Voltage
Collector Current Characteristics
500
400
300
200
100
VI = 1.4V
VCC = 5V
Ta = 75°C
Ta = 25°C
Ta = –20°C
0
0
0.5
1.0
1.5
2.0
Output saturation voltage VCE(sat) (V)
Duty Cycle-Collector Characteristics
(M54587P)
500
1
400
300
2
200
•The collector
current values
represent the current per circuit.
100 •Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Vcc = 5V •Ta = 75°C
0
0
20 40 60 80
3
4
5
7
6
8
100
Duty cycle (%)
Mar.2002