M54522P_11 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54522P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
INPUT
VO
Measured device
RL
OPEN
PG
OUTPUT
50Ω
CL
50%
INPUT
OUTPUT
50%
ton
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VIN = 0 to 8V
(2) Input-output conditions : RL = 25Ω, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
50%
50%
toff
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
2.0
M54522P
1.5
M54522FP
1.0
0.5
0
0
25
50
75
100
Ambient temperature Ta (°C)
Duty-Cycle-Collector Characteristics
(M54522P)
500
400
Œ

300
200
•The collector current values
represent the current per circuit.
100 •Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
00
20 40 60 80
Ž


‘
’“
100
Duty cycle (%)
Output Saturation Voltage
Collector Current Characteristics
500
VI = 4V
400
300
200
100
Ta = 75°C
00
0.5
Ta = 25°C
Ta = –20°C
1.0
1.5
2.0
Output saturation voltage VCE (sat) (V)
Duty-Cycle-Collector Characteristics
(M54522P)
500
400
Œ
300
200
•The collector current values
represent the current per circuit.
100 •Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
00
20 40 60 80

Ž


’
‘
“
100
Duty cycle (%)
Aug. 1999