FX70SMJ-03 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–2.0
Tc = 25°C
Pulse Test
–1.6
–1.2
ID = –100A
–0.8
–0.4
–70A
–35A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–100
Tc = 25°C
VDS = –10V
Pulse Test
–80
–60
–40
–20
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
10⁵ f = 1MHZ
7 _{VGS = 0V}
5
3
2
Ciss
10⁴
7
5
3
Coss
2
10³
Crss
7
5
3
2
–3 –5 –7 –10⁰ –2 –3 –5 –7 –10¹ –2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
Tc = 25°C
Pulse Test
32
24
VGS = –4V
16
–10V
8
0
–10⁰ –2 –3 –5 –7–10¹ –2 –3 –5–7–10² –2 –3 –5 –7–10³
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
VDS = –10V
Pulse Test
5
4
3
2
TC = 125°C
75°C
10¹
25°C
7
5
4
3
2
10⁰
–10⁰ –2 –3 –5 –7–10¹ –2 –3 –5 –7–10²
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
td(off)
7
5
tf
4
3
2
tr
10²
td(on)
7
5
4
3
Tch = 25°C
2
VGS = –10V
VDD = –15V
10¹
–5
–7
–10⁰
–2
–3
RGEN = RGS = 50Ω
–5–7 –10¹ –2 –3 –5–7 –10² –2 –3 –5
DRAIN CURRENT ID (A)
Jan.1999