FX6KMJ-2 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–20
Tc = 25°C
Pulse Test
–16
–12
–8
ID =
–12A
–4
–6A
–3A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
–16
–12
Tc = 25°C
VDS = –10V
Pulse Test
–8
–4
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Ciss
10³
7
5
4
3
Tch = 25°C
2
f = 1MHZ
VGS = 0V
10²
Coss
7
5
4
Crss
3
2
–3
–5–7–10⁰ –2 –3
–5–7–10¹
–2 –3
–5–7–10² –2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX6KMJ-2
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
VGS =
0.8
–4V
–10V
0.6
0.4
0.2
Tc = 25°C
Pulse Test
–010^–1 –2 –3 –5 –7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10¹
7
5 ^{TC = 75°C 125°C}
4 ^25°C
3
2
10⁰
7
5
4
VDS = –5V
3
Pulse Test
2
10^–1_{–7–10–1 –2 –3 –4–5 –7–100 –2 –3 –4–5 –7}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
Tch = 25°C
3
VGS = –10V
2
VDD = –50V
RGEN = RGS = 50Ω
10²
7
5
3
2
10¹
7
5
–7
–10^–1
–2 –3
td(off)
tf
td(on)
tr
–5 –7 –10⁰ –2 –3
–5 –7
DRAIN CURRENT ID (A)
Jan.1999