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FX50KMJ-06 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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PRELIMINARY NSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
â5.0
â4.0
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
Tc = 25°C
Pulse Test
â3.0
â2.0
ID =
â100A
â1.0
â50A
â25A
0
0
â2 â4 â6 â8 â10
GATE-SOURCE VOLTAGE VGS (V)
â100
â80
TRANSFER CHARACTERISTICS
(TYPICAL)
Tc = 25°C
VDS = â10V
Pulse Test
â60
â40
â20
0
0
â2 â4 â6 â8 â10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
105
f = 1MHZ
7
VGS = 0V
5
3
2
Ciss
104
7
5
3
2
Coss
103
7
5
3
Crss
2
â3
â5â7â100 â2 â3
â5â7â101 â2 â3
â5â7â102 â2 â3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX50KMJ-06
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
Tc = 25°C
Pulse Test
32
VGS = â4V
24
16
â10V
8
0â100 â2 â3 â5 â7â101 â2 â3 â5 â7â102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
7
TC =
125°C
75°C
5
4
25°C
3
2
101
7
5
VDS = â10V
4
Pulse Test
3
2
10â0100 â2 â3 â4 â5 â7â101 â2 â3 â4â5 â7â102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
td(off)
5
4
tf
3
2
tr
102
7
5
4
3
2
101
â7 â100
td(on)
Tch = 25°C
VGS = â10V
VDD = â30V
RGEN = RGS = 50â¦
â2 â3 â4 â5 â7 â101 â2 â3 â4 â5 â7
DRAIN CURRENT ID (A)
Jan.1999
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