FX50KMJ-03 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–10
Tc = 25°C
Pulse Test
–8
–6
–4
ID = –100A
–2
–50A
–25A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–100
Tc = 25°C
VDS = –10V
Pulse Test
–80
–60
–40
–20
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10⁴
7
5
Ciss
4
3
2
10³
7
5
4
3
2 ^{Tch = 25°C}
f = 1MHZ
10^{2 VGS =}
–3 –5
0V
–7–10⁰
–2 –3
Coss
Crss
–5 –7–10¹ –2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX50KMJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
Tc = 25°C
Pulse Test
80
VGS = –4V
60
40
–10V
20
0
–10⁰ –2 –3 –5 –7–10¹ –2 –3 –5 –7–10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
VDS = –10V
Pulse Test
5
4
75°C 125°C
3
TC = 25°C
2
10¹
7
5
4
3
2
10⁰
–10⁰ –2 –3 –5 –7–10¹ –2 –3 –5 –7–10²
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
Tch = 25°C
7 _{VGS = –10V}
5 _{VDD = –15V}
4 _{RGEN = RGS = 50Ω}
3
td(off)
2
10²
tf
7
tr
5
4
3
td(on)
2
10¹
–5
–7
–10⁰
–2 –3
–5 –7–10¹
–2 –3 –5
DRAIN CURRENT ID (A)
Jan.1999