FX30KMJ-03 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–5.0
Tc = 25°C
Pulse Test
–4.0
–3.0
ID = –50A
–2.0
–1.0
–30A
–15A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–50
Tc = 25°C
VDS = –10V
Pulse Test
–40
–30
–20
–10
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
10⁴ f = 1MHZ
7 _{VGS = 0V}
5
3
2
Ciss
10³
7
5
Coss
3
Crss
2
10²
7
5
3
2
–3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 3 –5–7–10² –2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX30KMJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
Tc = 25°C
Pulse Test
160
120
VGS = –4V
80
–10V
40
0
–10^–1 –2 –3 –5 –7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5 –7–10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
VDS = –10V
Pulse Test
10²
7
5
4
3
75°C 125°C
2
TC = 25°C
10¹
7
5
4
3
2
–10⁰
–2 –3 –5 –7–10¹
–2 –3 –5 –7–10²
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
Tch = 25°C
7 _{VGS = –10V}
5 _{VDD = –15V}
4 _{RGEN = RGS = 50Ω}
3
2
td(off)
10²
tf
7
5
4
tr
3
2
td(on)
10¹
–5
–7
–10⁰
–2 –3
–5 –7–10¹
–2 –3 –5
DRAIN CURRENT ID (A)
Jan.1999