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FX20KMJ-06 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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PRELIMINARY NSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
â10
Tc = 25°C
Pulse Test
â8
â6
â4
â2
â10A
ID =
â40A
â20A
0
0
â2 â4 â6 â8 â10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
â50
Tc = 25°C
VDS = â10V
â40
Pulse Test
â30
â20
â10
0
0
â2 â4 â6 â8 â10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
3
2
Ciss
103
Tch = 25°C
7
f = 1MHZ
5
VGS = 0V
4
3
Coss
2
102
7
Crss
5
4
3
â3
â5â7â100
â2 â3
â5â7â101
â2 â3
â5â7â102
â2 â3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX20KMJ-06
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
Tc = 25°C
Pulse Test
160
VGS = â4V
120
â10V
80
40
0
â10â1 â2 â3 â5â7â100 â2 â3 â5â7â101 â2 â3 â5â7â102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
7
VDS = â10V
5
Pulse Test
4
3
2 TC = 75°C 125°C
25°C
101
7
5
4
3
2
10â0100 â2 â3 â4 â5 â7â101 â2 â3 â4â5 â7â102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
3
2
td(off)
102
tf
7
5
4
tr
3
2
td(on)
101
7
5
4
3
â5
â7 â100
Tch = 25°C
VGS = â10V
VDD = â30V
RGEN = RGS = 50â¦
â2 â3 â4â5 â7 â101 â2 â3 â4â5
DRAIN CURRENT ID (A)
Jan.1999
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