FX20KMJ-03 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
–5.0
–4.0
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
Tc = 25°C
Pulse Test
–3.0
–2.0
–1.0
ID = –20A
–10A
–5A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
Tc = 25°C
VDS = –10V
–16
Pulse Test
–12
–8
–4
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
10⁴
7
Tch = 25°C
5
f = 1MHZ
3
VGS = 0V
2
10³
Ciss
7
5
3
2
Coss
10²
7
Crss
5
3
2
–3
–5–7–10⁰
–2 –3
–5–7–10¹ –2 –3
–5–7–10²
–2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX20KMJ-03
HIGH-SPEED SWITCHING USE
0.40
0.32
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
VGS = –4V
Tc = 25°C
Pulse Test
0.24
–10V
0.16
0.08
0
–10^–1 –2 –3 –5 –7–10⁰ –2 –3 –5– 7 –10¹ –2 –3 –5 –7–10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10¹
7
5
4
3
125°C
2
TC = 25°C ^75°C
10⁰
7
5
4
3
VDS = –5V
Pulse Test
2
10^–1
–3
–5 –7 –10⁰
–2 –3 –5 –7 –10¹
–2 –3
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
10²
7
td(off)
tr
5
3
tf
2
10¹
td(on)
7
5
Tch = 25°C
3
VGS = –10V
2
VDD = –15V
10⁰
–5–7–10⁰
–2 –3
RGEN = RGS = 50Ω
–5–7–10¹ –2 –3 –5–7–10² –2 –3 –5
DRAIN CURRENT ID (A)
Jan.1999