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FX20ASJ-03 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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PRELIMINARY NSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
â5.0
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
Tc = 25°C
Pulse Test
â4.0
â3.0
â2.0
ID =
â20A
â1.0
â10A
â5A
0
0
â2 â4 â6 â8 â10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
â20
Tc = 25°C
VDS = â10V
â16
Pulse Test
â12
â8
â4
0
0
â2 â4 â6 â8 â10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
104
7
Tch = 25°C
5
f = 1MHZ
3
VGS = 0V
2
103
Ciss
7
5
3
2
Coss
102
7
Crss
5
3
2
â3
â5â7â100 â2 â3
â5â7â101
â2 â3
â5â7â102 â2 â3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX20ASJ-03
HIGH-SPEED SWITCHING USE
0.40
0.32
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
VGS = â4V
Tc = 25°C
Pulse Test
0.24
â10V
0.16
0.08
0
â10â1 â2 â3 â5 â7â100 â2 â3 â5â 7 â101 â2 â3 â5 â7â102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
101
7
5
4
3
125°C
2
TC = 25°C 75°C
100
7
5
4
3
VDS = â5V
Pulse Test
2
10â1
â3
â5 â7 â100
â2 â3 â5 â7 â101
â2 â3
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
3
2
102
7
td(off)
tr
5
3
tf
2
101
td(on)
7
5
Tch = 25°C
3
VGS = â10V
2
VDD = â15V
100
â5â7â100
â2 â3
RGEN = RGS = 50â¦
â5â7â101 â2 â3 â5â7â102 â2 â3 â5
DRAIN CURRENT ID (A)
Jan.1999
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