FS4KM-12 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
ID = 8A
32
TC = 25°C
Pulse Test
24
6A
16
4A
8
2A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
TC = 25°C
VDS = 50V
8
Pulse Test
6
4
2
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10³
7
Ciss
5
3
2
10²
7
5
Coss
3
2
10¹
7 ^{Tch = 25°C}
Crss
5 ^{f = 1MHz}
VGS = 0V
3
2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS4KM-12
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
10
TC = 25°C
Pulse Test
8
VGS = 10V
6
20V
4
2
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10¹
7
VDS = 10V
Pulse Test
5
TC = 25°C
3
2
10⁰
7
75°C
5
125°C
3
2
10^–1
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
5
3 tf
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
2
10^{2 td(off)}
7
5
3
2 _td(on)
tr
10¹
10^–1 2 3
5 7 10⁰
23
5 7 10¹
DRAIN CURRENT ID (A)
Feb.1999