FS30KMJ-3 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5
TC = 25°C
Pulse Test
4
ID = 50A
3
2
30A
1
10A
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
50
TC = 25°C
VDS = 10V
40
Pulse Test
30
20
10
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
10⁴
VGS = 0V
7
5
f = 1MHZ
3
Ciss
2
10³
7
5
Coss
3
2
Crss
10²
7
5
3
2
3
5 710⁰
23
5 7 10¹
23
5 7 10² 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS30KMJ-3
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
TC = 25°C
Pulse Test
80
VGS = 4V
60
10V
40
20
0
3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
5
4
TC = 25°C
3
75°C
125°C
2
10¹
7
5
4
3
2
10⁰₁₀₀
2 3 4 5 7 10¹
VDS = 10V
Pulse Test
2 3 4 5 7 10²
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
Tch = 25°C
VDD = 80V
5
4
td(off)
VGS = 10V
RGEN = RGS = 50Ω
3
2
tf
10²
7
5
4
3
tr
td(on)
2
10¹_{100 2 3 4 5 7 101 2 3 4 5 7 102}
DRAIN CURRENT ID (A)
Feb.1999