FS2VS-18A Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
50
TC = 25°C
Pulse Test
40
ID = 4A
30
20
2A
10
1A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
5
TC = 25°C
VDS = 50V
4
Pulse Test
3
2
1
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10³
7
5
Ciss
3
2
10²
7
5
3
Coss
2
10¹
7
5
3
2
Tch = 25°C
f = 1MHZ
VGS = 0V
Crss
10⁰
2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS2VS-18A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
10
TC = 25°C
Pulse Test
VGS = 10V
20V
8
6
4
2
0
10^–2 2 3 5 710^–1 2 3 5 7 10⁰ 2 3 5 7 10¹
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10¹
7
VDS = 10V
Pulse Test
5
3
2
TC = 25°C
75°C
10⁰
7
5
3
125°C
2
10^–₁¹_{0–1 2 3 5 7 100 2 3 5 7 101}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
3
Tch = 25°C
2
VDD = 200V
VGS = 10V
10²
RGEN = RGS = 50Ω
7
5
td(off)
3
tf
2
tr
10¹
td(on)
7
5
3
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹
DRAIN CURRENT ID (A)
Feb.1999