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FS10VS-5 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE
◁
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
TC = 25°C
Pulse Test
32
24
16
ID = 20A
8
15A
10A
5A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
VDS = 50V
TC = 25°C
32
Pulse Test
24
16
8
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
5
3
2
103
7
Ciss
5
3
2
102
Coss
7
5
3 Tch = 25°C
2 f = 1MHz
VGS = 0V
Crss
101
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS10VS-5
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
TC = 25°C
Pulse Test
0.8
VGS = 10V
0.6
20V
0.4
0.2
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
101
7
TC = 25°C
5
3
2
125°C 75°C
100
7
5
3
2
10–1
100
23
5 7 101
VDS = 10V
Pulse Test
2 3 5 7 102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
Tch = 25°C
VDD = 150V
5
VGS = 10V
RGEN = RGS = 50Ω
3
2
102
7
5
3
2
101
10–1
23
td(off)
tf
td(on)
tr
5 7 100
23
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
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