CR8PM Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

GATE CHARACTERISTICS
10²
7
5
3
2
VFGM = 6V
10¹
7
5
3
2 ^{VGT = 1V}
PGM = 5W
PG(AV)
= 0.5W
10⁰
7
IGT = 15mA
5
3
2
VGD = 0.2V
IFGM = 2A
10^–1
5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
00100000........59087634_{,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,}^JUN_,,,,,,,,,,^CT_,,,,,,,,,,^IO_,,,,,,,,,,^{N T}_,,,,,,,,,,^EM_,,,,,,,,,,^DPIES_,,,,,,,,,,^RTAR_,,,,,,,,,,^TTEIBUYX_,,,,,,,,,,^UPRATIMECI_,,,,,,,,,,^OPANLL_,,,,,,,,,,^E
0.2
0.1
0
–40 –20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
32
28
24
θ = 30° 60° 90° 120° 180°
20
16
12
θ
8
360°
RESISTIVE,
4
INDUCTIVE
LOADS
0
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR8PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
–40 –20 0 20 40 60 80 100 120 140160
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
10²
7
5
3
2
10¹
7
5
3
2
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–32 3 5 710^–22 3 5 710^–12 3 5 710⁰2 3 5 710¹
TIME (s)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
140
θ
120
360°
RESISTIVE,
100
INDUCTIVE
80
LOADS
60
40
90°
θ = 30° 60° 120° 180°
20
0
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
Feb.1999