CM800HB-50H Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800HB-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
1600
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj=25°C
VGE=13V
VGE=14V
1200 VGE=15V
VGE=12V
VGE=11V VGE=10V
VGE=20V
800
VGE=9V
400
VGE=8V
VGE=7V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
1600
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE=10V
1200
800
400
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE=15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0
400
800 1200 1600
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
IC = 1600A
IC = 800A
4
2
IC = 320A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0
400
800 1200 1600
EMITTER CURRENT IE (A)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7
VGE = 0V, Tj = 25°C
5
Cies, Coes : f = 100kHz
3
Cres
: f = 1MHz
2
Cies
10²
7
5
3
2
10¹
7
Coes
5
3
Cres
2
10⁰
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003