CM800HA-66H Datasheet, PDF (3/3 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
1600
1400
1200
1000
800
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj=25°C
VGE=13V
VGE=14V
VGE=15V
VGE=20V
VGE=12V
VGE=11V
VGE=10V
600
400
VGE=9V
200
VGE=8V
VGE=7V
0
0 1 2 3 4 5 6 7 8 9 10
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
1600
1400
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE=10V
1200
1000
800
600
400
200
Tj = 25°C
Tj = 125°C
0
0 2 4 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE=15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
7 Tj=25°C
5
3
2
10³
7
5
3
2
10²
7
5
3
2
10¹
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
Aug.1998