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| CM75DY-28H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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MITSUBISHI IGBT MODULES
CM75DY-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
150
15
Tj = 25oC
120
VGE = 20V
14
13
12
90
11
60
10
30
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 150A
IC = 75A
6
4
2
IC = 30A
0
0
104
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
td(off)
tf
102
td(on)
101
100
100
tr
VCC = 800V
VGE = ±15V
RG = 4.2â¦
Tj = 125°C
101
COLLECTOR CURRENT, IC, (AMPERES)
102
TRANSFER CHARACTERISTICS
(TYPICAL)
150
VCE = 10V
Tj = 25°C
120
Tj = 125°C
90
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
60
2
30
1
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
102
101
100
0.0
1.0
2.0
3.0
4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101
Irr
trr
102
100
0
0
30
60 90 120 150
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
102
101
Cies
100
Coes
10-1
Cres
VGE = 0V
10-2
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 75A
16
VCC = 800V
VCC = 600V
12
8
di/dt = -150A/µsec
Tj = 25°C
101
100
101
4
10-1
0
102
0
EMITTER CURRENT, IE, (AMPERES)
200
400
GATE CHARGE, QG, (nC)
600
Sep.1998
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