CM75DY-24H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM75DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
150
15
T_j = 25^oC
12
125
V_GE = 20V
100
11
75
10
50
9
25
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 150A
6
I_C = 75A
4
2
I_C = 30A
0
0
10³
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_f
t_d(off)
10²
V_CC = 600V
V_GE = ±15V
R_G = 4.2Ω
T_j = 125°C
10¹
10⁰
t_d(on)
t_r
10¹
COLLECTOR CURRENT, I_C, (AMPERES)
10²
TRANSFER CHARACTERISTICS
(TYPICAL)
150
V_CE = 10V
125
T_j = 25°C
T_j = 125°C
100
75
50
25
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
3
2 ^{Tj = 25°C}
10²
7
5
3
2
10¹
7
5
3
1.0 1.5 2.0 2.5 3.0 3.5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10²
10²
t_rr
10¹
I_rr
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0 25 50 75 100 125 150
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10²
10¹
C_ies
C_oes
10⁰
V_GE = 0V
10^-1
10^-1
10⁰
C_res
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 75A
16
V_CC = 400V
V_CC = 600V
12
8
di/dt = -150A/µsec
T_j = 25°C
10¹
10⁰
10¹
EMITTER CURRENT, I_E, (AMPERES)
10⁰
10²
4
0
0 100 200 300 400 500 600
GATE CHARGE, Q_G, (nC)
Sep.1998