CM600HU-12H_09 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
1200
VGE=20
(V)
1000 ^Tj=25°C
14
13
15
800
12
600
11
400
10
200
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0 200 400 600 800 1000 1200
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
3
2
10³
7
5
3
2
10²
7
5
0.6 1.0 1.4 1.8 2.2 2.6 3.0
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM600HU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSFER CHARACTERISTICS
(TYPICAL)
1200
VCE = 10V
1000
800
600
400
200
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
9
8
7
IC = 1200A
6
IC = 600A
5
4
3
2
1
IC = 240A
0
0 2 4 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
5
3 ^{VGE = 0V}
2
10²
7
5
3
Cies
2
10¹
7
5
Coes
3
2
10⁰
7
5
10^–1 2 3
5 7 10⁰ 2 3
Cres
5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009
3