CM600DY-24A_09 Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

PERFORMANCE CURVES
1200
1000
800
OUTPUT CHARACTERISTICS
(TYPICAL)
VGE =
20V
15
Tj = 25°C
13
12
600
11
400
200
10
9
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
4
IC = 1200A
IC = 600A
2
IC = 240A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
10²
Cies
7
5
3
2
10¹
7
5
Coes
3
2
10⁰
7
5
3
2 _{VGE = 0V}
10^–₁¹_{0–1 2 3 5 7 100 2 3}
Cres
5 7 10¹ 2 3 5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
3
MITSUBISHI IGBT MODULES
CM600DY-24A
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
4
VGE = 15V
3
2
1
Tj = 25°C
Tj = 125°C
0
0 200 400 600 800 1000 1200
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
7
5
3
2
10³
7
5
3
2
10²
7
5
3
2
Tj = 25°C
Tj = 125°C
10¹ ₀
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
td(off)
7
td(on)
5
tf
3
2
10²
7
tr
Conditions:
5 _{VCC = 600V}
3 VGE = ±15V
2
RG = 0.52Ω
Tj = 125°C
Inductive load
101¹ _{01 2 3 5 7 102}
23
5 7 10³
COLLECTOR CURRENT IC (A)
Feb. 2009