CM450HA-5F Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM450HA-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
1000
T_j = 25^oC
5.75
V_GE = 15V
800
10
8
6
5.5
600
400
5.25
200
5.0
4.5 _4.75
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
T_j = 25°C
4
3
I_C = 450A
2
I_C = 900A
1
I_C = 180A
0
0
5
10
15
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10⁴
V_CC = 100V
V_GE = ±10V
R_G = 5.6Ω
T_j = 125°C
10³
t_d(off)
t_d(on)
t_f
10²
10¹
t_r
10²
COLLECTOR CURRENT, I_C, (AMPERES)
10³
1000
800
TRANSFER CHARACTERISTICS
(TYPICAL)
V_CE = 10V
T_j = 25°C
T_j = 125°C
600
400
200
0
0
2
4
6
8
10
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
T_j = 25°C
10³
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
2.0
V_GE = 15V
T_j = 25°C
T_j = 125°C
1.5
1.0
0.5
0
0 200 400 600 800 1000
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10³
V_GE = 0V
10²
C_ies
10²
10¹
0.6 0.8 1.0 1.2 1.4 1.6 1.8
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10³
di/dt = -900A/µsec
T_j = 25°C
t_rr
10²
10²
I_rr
10¹
C_oes
10⁰
10^-1
10⁰
C_res
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 450A
15
V_CC = 50V
V_CC = 100V
10
5
10¹
10¹
10²
EMITTER CURRENT, I_E, (AMPERES)
10¹
10³
0
0
1
2
3
4
5
GATE CHARGE, Q_G, (nC)
Sep.1998