CM450DX-24A Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol
Parameter
Conditions
ICES
VGE(th)
IGES
Collector cutoff current
VCE = VCES, VGE = 0V
Gate-emitter threshold voltage IC = 45mA, VCE = 10V
Gate leakage current
±VGE = VGES, VCE = 0V
VCE(sat)
IC = 450A, VGE = 15V
Collector-emitter saturation voltage
(Note. 6)
IC = 450A, VGE = 15V
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
QG
Total gate charge
VCC = 600V, IC = 450A, VGE = 15V
td(on)
Turn-on delay time
VCC = 600V, IC = 450A
tr
Turn-on rise time
VGE = ±15V, RG = 0.68Ω
td(off)
Turn-off delay time
Inductive load
tf
Turn-off fall time
trr (Note.3) Reverse recovery time
Qrr (Note.3) Reverse recovery charge
(IE = 450A)
VEC(Note.3) _{Emitter-collector voltage}
IE = 450A, VGE = 0V
IE = 450A, VGE = 0V, chip
Rlead
Module lead resistance
Main terminals-chip, per switch
Rth(j-c)Q Thermal resistance
per IGBT
Rth(j-c)R (Junction to case) (Note. 1) per free wheeling diode
Rth(c-f)
Contact thermal resistance Thermal grease applied
(Case to heat sink) (Note. 1) per 1 module
RGint
Internal gate resistance
per switch
RG
External gate resistance
Tj = 25°C
Tj = 125°C
Chip
(Note. 6)
(Note. 2)
TC = 25°C
TC = 125°C
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.4
2.8
0.68
Limits
Typ.
Max. ^Unit
—
1
mA
7
8
V
—
0.5
µA
2.0
2.6
2.2
—
V
1.9
—
—
68
—
5.9
nF
—
1.4
2000
—
nC
—
650
—
250
—
700
ns
—
600
—
250
14
—
µC
2.6
3.4
V
2.5
—
0.8
—
mΩ
—
0.044
—
0.078 _K/W
0.015
—
2.0
2.6
3.0
5.2
Ω
—
6.8
NTC THERMISTOR PART
Symbol
Parameter
R
∆R/R
B(25/50)
P25
Zero power resistance
Deviation of resistance
B constant
Power dissipation
Conditions
TC = 25°C
TC = 100°C, R100 = 493Ω
Approximate by equation
TC = 25°C
Min.
4.85
–7.3
(Note. 7) —
—
Limits
Typ.
5.00
—
3375
—
Max.
5.15
+7.8
—
10
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCE(sat) and VEC)
7: B(25/50) = In( ^R25 )/( ¹
R50 T25
1)
T50
R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K]
Unit
kΩ
%
K
mW
Jul. 2009
3