CM400HU-24H_09 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
800
VGE = 20
15
(V)
12
Tj = 25°C
600
11
400
10
200
9
8
0
0 1 2 3 4 5 6 7 8 9 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0
200
400
600
800
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
3
Tj = 25°C
2
10³
7
5
3
2
10²
7
5
3
1.0 1.5 2.0 2.5 3.0 3.5
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM400HU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSFER CHARACTERISTICS
(TYPICAL)
800
VCE = 10V
600
400
200
Tj = 25°C
Tj = 125°C
0
0 2 4 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
9
8
7
IC = 800A
6
IC = 400A
5
4
3
2
IC = 160A
1
0
0 2 4 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
5
3 ^{VGE = 0V}
2
10²
7
5
3
Cies
2
10¹
7
5
3
Coes
2
10⁰
Cres
7
5
3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009
3