CM400HU-24F Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
800
Tj = 25°C
9.5
700
VGE = 20V
600
15
11
9
500
10
400
8.5
300
200
8
100
0
0 0.5 1 1.5 2 2.5 3 3.5 4
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 800A
2
IC = 400A
IC = 160A
1
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
10²
Cies
7
5
3
2
10¹
7
5
3
2
VGE = 0V
101⁰_{0–1 2 3 5 7 100 2 3}
Coes
Cres
5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
MITSUBISHI IGBT MODULES
CM400HU-24F
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE = 15V
2.5
Tj = 25°C
Tj = 125°C
2
1.5
1
0.5
0
0
200
400
600
800
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7 ^{Tj = 25°C}
5
3
2
10²
7
5
3
2
10¹
0 0.5 1 1.5 2 2.5 3 3.5
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
7
td(off)
5
tf
3
td(on)
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
10¹
tr
2 3 5 7 10²
Conditions:
VCC = 600V
VGE = ±15V
RG = 0.78Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
Aug. 1999