CM400DU-12NFH_09 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
800
700
11
13
15
10
9.5
Tj = 25°C
9
600
VGE =
20V
8.5
500
8
400
300
7.5
200
100
7
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4.5
4
3.5
3
IC = 800A
2.5
2
IC = 400A
1.5
IC = 160A
1
0.5
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
10²
Cies
7
5
3
2
10¹
7
5
3
2
VGE = 0V
101⁰_{0–1 2 3 5 7 100 2 3}
Coes
Cres
5 7 10¹ 2 3 5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
3
MITSUBISHI IGBT MODULES
CM400DU-12NFH
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
3
VGE = 15V
2.5
2
1.5
1
0.5
0
0
Tj = 25°C
Tj = 125°C
100 200 300 400 500 600 700 800
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
10²
7
5
3
2
Tj = 25°C
10¹
0 0.5 1 1.5 2 2.5 3
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
5
td(off)
td(on)
3
2
10²
7
5
3
2
101¹ ₀₁
23
5 7 10²
tf
tr
Conditions:
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
Feb. 2009