CM30TF-24H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM30TF-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
60
V_GE = 20V ¹⁵
12
50 ^Tj ^{= 25°C}
40
11
30
10
20
9
10
78
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 60A
I_C = 30A
6
4
2
I_C = 12A
0
0
10³
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
t_f
10²
t_d(on)
10¹
10⁰
V_CC = 600V
V_GE = ±15V
R_G = 10Ω
T_j = 125°C
t_r
10¹
10²
COLLECTOR CURRENT, I_C, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
60
V_CE = 10V
50
T_j = 25°C
T_j = 125°C
40
30
20
10
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10²
7 ^Tj ^{= 25°C}
5
3
2
10¹
7
5
3
2
10⁰
1.0 1.5 2.0 2.5 3.0 3.5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10¹
di/dt = -60A/µsec
T_j = 25°C
I_rr
t_rr
10²
10⁰
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_CE = 15V
4
T_j = 25°C
T_j = 125°C
3
2
1
0
0 10 20 30 40 50 60
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10¹
C_ies
V_GE = 0V
10⁰
C_oes
10^-1
C_res
10^-2
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 30A
16
V_CC = 400V
V_CC = 600V
12
8
10¹
10⁰
10¹
EMITTER CURRENT, I_E, (AMPERES)
10^-1
10²
4
0
0 40 80 120 160 200 240
GATE CHARGE, Q_G, (nC)
Sep.1998