CM300DU-34KA Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD 300 Amperes/1700 Volts

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
600
Tj = 25°C
12
11
500 ^{VGE = 20V}
15
400
10
14
300
9
200
100
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
6
VGE = 15V
5
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0 100 200 300 400 500 600
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7 ^{Tj = 25°C}
5
3
2
10²
7
5
3
2
10¹
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM300DU-34KA
HIGH POWER SWITCHING USE
TRANSFER CHARACTERISTICS
(TYPICAL)
600
VCE = 10V
500
Tj = 25°C
Tj = 125°C
400
300
200
100
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
IC = 600A
4
IC = 300A
2
IC = 120A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10²
7
5
3
Cies
2
10¹
7
5
3
2
10⁰
7
5
3
2
VGE = 0V
10^–₁¹_{0–1 2 3 5 7 100 2 3}
Coes
Cres
5 7 10¹ 2 3 5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Sep. 2001