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CM200RX-12A Datasheet, PDF (3/8 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE | |||
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MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol
Parameter
Conditions
Min.
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
â
VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V
5
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
â
Tj = 25°C
â
Collector-emitter saturation IC = 200A, VGE = 15V
(Note. 6)
VCE(sat) voltage
Tj = 125°C
â
IC = 200A, VGE = 15V
Chip
â
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
â
(Note. 6) â
â
QG
Total gate charge
VCC = 300V, IC = 200A, VGE = 15V
â
td(on)
Turn-on delay time
VCC = 300V, IC = 200A
â
tr
Turn-on rise time
VGE = ±15V, RG = 5.1Ω
â
td(off)
Turn-off delay time
Inductive load
â
tf
Turn-off fall time
â
trr (Note.3) Reverse recovery time
(IE = 200A)
â
Qrr (Note.3) Reverse recovery charge
â
VEC(Note.3) Emitter-collector voltage
IE = 200A, VGE = 0V
Tj = 25°C
(Note. 6)
â
Tj = 125°C
â
IE = 200A, VGE = 0V
Chip
â
Rth(j-c)Q Thermal resistance
per IGBT
â
(Note. 1)
Rth(j-c)R (Junction to case)
per free wheeling diode
â
RGint
Internal gate resistance
TC = 25°C, per switch
â
RG
External gate resistance
3.0
Limits
Typ.
Max. Unit
â
1
mA
6
7
V
â
0.5
μA
1.7
2.1
1.9
â
V
1.6
â
â
27
â
2.7
nF
â
0.8
530
â
nC
â
120
â
150
â
350
ns
â
600
â
200
5
â
μC
2.0
2.8
1.95
â
V
1.9
â
â
0.17 K/W
â
0.33
0
â
Ω
â
31
BRAKE PART
Symbol
Parameter
Conditions
Min.
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
â
VGE(th) Gate-emitter threshold voltage IC = 10mA, VCE = 10V
5
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
â
Collector-emitter saturation
VCE(sat)
IC = 100A, VGE = 15V
Tj = 25°C
(Note. 6)
Tj = 125°C
â
â
voltage
IC = 100A, VGE = 15V
Chip
â
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
â
(Note. 6) â
â
QG
Total gate charge
VCC = 300V, IC = 100A, VGE = 15V
â
IRRM(Note.3) Repetitive peak reverse current VR = VRRM
â
VFM(Note.3) Forward voltage drop
IF = 100A
Tj = 25°C
â
(Note. 6)
Tj = 125°C
â
IF = 100A
Chip
â
Rth(j-c)Q Thermal resistance
per IGBT
â
Rth(j-c)R
(Note. 1)
(Junction to case)
per Clamp diode
â
RGint
Internal gate resistance
TC = 25°C
â
RG
External gate resistance
6.0
Limits
Typ.
Max. Unit
â
1
mA
6
7
V
â
0.5
μA
1.7
2.1
1.9
â
V
1.6
â
â
13.3
â
1.4
nF
â
0.45
270
â
nC
â
1
mA
2.0
2.8
1.95
â
V
1.9
â
â
0.31 K/W
â
0.59
0
â
Ω
â
62
Jan. 2009
3
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