CM200E3U-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT
–
Thermal Resistance, Junction to Case
R_th(j-c)D
Per FWDi
–
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R_th(j-c)
R_th(c-f)
Clamp Diode Part
–
Per Module, Thermal Grease Applied
–
Typ.
–
–
–
0.035
Max.
0.19
0.35
0.35
–
Units
°C/W
°C/W
°C/W
°C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
500
T_j = 25^oC
400
15 ₁₄
V_GE = 20V
13
300
12
200
11
10
100
9
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 400A
6
I_C = 200A
4
2
I_C = 80A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
400
V_CE = 10V
T_j = 25°C
300
T_j = 125°C
200
100
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
10²
10¹
0.6 1.0 1.4 1.8 2.2 2.6 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0 100
200 300 400 500
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
V_CE
10²
V_GE = 0V
10¹
C_ies
C_oes
10⁰
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
Sep.1998