CM200DY-24H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM200DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
400
T_j = 25^oC
15
12
320 V_GE = 20V
11
240
10
160
9
80
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 400A
6
I_C = 200A
4
2
I_C = 80A
0
0
10³
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_f
t_d(off)
t_d(on)
10²
10¹
10¹
V_CC = 600V
V_GE = ±15V
t_r
R_G = 1.6Ω
T_j = 125°C
10²
COLLECTOR CURRENT, I_C, (AMPERES)
10³
TRANSFER CHARACTERISTICS
(TYPICAL)
400
V_CE = 10V
T_j = 25°C
320
T_j = 125°C
240
160
80
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7 ^{Tj = 25°C}
5
3
2
10²
7
5
3
2
10¹
1.0 1.5 2.0 2.5 3.0 3.5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10²
I_rr
t_rr
10²
10¹
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0
10²
80 160 240 320
COLLECTOR-CURRENT, I_C, (AMPERES)
400
CAPACITANCE VS. V_CE
(TYPICAL)
C_ies
10¹
C_oes
10⁰
C_res
V_GE = 0V
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 200A
16
V_CC = 400V
V_CC = 600V
12
8
di/dt = -400A/µsec
T_j = 25°C
10¹
10¹
10²
EMITTER CURRENT, I_E, (AMPERES)
10⁰
10³
4
0
0
400
800
1200 1600
GATE CHARGE, Q_G, (nC)
Sep.1998