CM200DY-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM200DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
400
T_j = 25^oC
V_GE = 20V
12
15
300
11
200
10
100
9
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 400A
6
I_C = 200A
4
2
0
0
10³
I_C = 80A
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10²
t_d(off)
t_f
t_d(on)
10¹
10¹
V_CC = 300V
t_r
V_GE = ±15V
R_G = 3.1Ω
T_j = 125°C
10²
COLLECTOR CURRENT, I_C, (AMPERES)
10³
TRANSFER CHARACTERISTICS
(TYPICAL)
400
V_CE = 10V
T_j = 25°C
300
T_j = 125°C
200
100
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
10²
10¹
0
0.8 1.6 2.4 3.2 4.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10²
–di/dt = 400A/µs
7 _{Tj = 25°C}
7
5
5
3
3
2
2
lrr
10²
10¹
7
trr
7
5
5
3
3
2
2
10¹
10¹
10⁰
2 3 5 7 10² 2 3 5 7 10³
EMITTER CURRENT, I_E, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0
100
200
300
400
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10²
C_ies
10¹
C_oes
10⁰
V_GE = 0V
10^-1
10^-1
10⁰
C_res
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 200A
16
V_CC = 200V
12
V_CC = 300V
8
4
0
0 200 400 600 800 1000
GATE CHARGE, Q_G, (nC)
Sep.1998