CM200DU-24F_09 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
400
Tj = 25°C
9.5
350
VGE = 20V
15
300
11
9
250
10
200
8.5
150
100
8
50
0
0 0.5 1 1.5 2 2.5 3 3.5 4
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 400A
2
IC = 200A
IC = 80A
1
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10²
7
5
3
Cies
2
10¹
7
5
3
2
10⁰
7
5
3
2
VGE = 0V
10^–₁¹_{0–1 2 3 5 7 100 2 3}
Coes
Cres
5 7 10¹ 2 3 5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
3
MITSUBISHI IGBT MODULES
CM200DU-24F
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
3
VGE = 15V
2.5
Tj = 25°C
Tj = 125°C
2
1.5
1
0.5
0
0
100
200
300
400
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7 ^{Tj = 25°C}
5
3
2
10²
7
5
3
2
10¹
0.5 1 1.5 2 2.5 3 3.5
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7 ^td(off)
5
tf
3
td(on)
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
10¹
23
5 7 10²
tr
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.6Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
Feb. 2009