CM200DU-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM200DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
400
T_j = 25^oC
V_GE = 20V
320
15
14
13
12
240
11
160
10
80
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 400A
6
I_C = 200A
4
2
I_C = 80A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10⁴
V_CC = 300V
V_GE = ±15V
R_G = 3.1 Ω
T_j = 125°C
10³
t_f
t_d(off)
10²
t_d(on)
t_r
10¹
10¹
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
400
V_CE = 10V
T_j = 25°C
320
T_j = 125°C
240
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
160
80
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
2
1
0
0 80 160 240 320 400
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
V_CE
10³
V_GE = 0V
10²
10²
10¹
0.6 1.0 1.4 1.8 2.2 2.6 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10⁴
10²
di/dt = -400A/µsec
T_j = 25°C
10³
I_rr
10¹
10¹
C_ies
C_oes
10⁰
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 200A
16
V_CC = 200V
V_CC = 300V
12
10²
t_rr
10⁰
10¹
10¹
10²
EMITTER CURRENT, I_E, (AMPERES)
10^-1
10³
8
4
0
0 100 200 300 400 500 600
GATE CHARGE, Q_G, (nC)
Sep.1998