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CM1800HC-34N Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K
Limits
Unit
Min
Typ
Max
â
â
12.5 K/kW
â
â
28.0 K/kW
â
11.0
â K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
M
â
CTI
da
ds
LC-E(int)
RC-E(int)
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
TC = 25°C
Limits
Unit
Min
Typ
Max
7.0
â
20.0
3.0
â
6.0 N·m
1.0
â
3.0
â
0.8
â
kg
600
â
â
â
19.5
â
â
mm
32.0
â
â
mm
â
16
â
nH
â
0.14
â
mâ¦
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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