CM150TU-12H_12 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
300
VGE=20
14
(V)
13
250
Tj=25°C
200
12
15
150
11
100
10
50
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0 50 100 150 200 250 300
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7 ^{Tj = 25°C}
5
3
2
10²
7
5
3
2
10¹
0.6 1.0 1.4 1.8 2.2 2.6 3.0
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM150TU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSFER CHARACTERISTICS
(TYPICAL)
300
VCE = 10V
250
200
150
100
50
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
4
IC = 300A
IC = 150A
2
IC = 60A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10²
7 VGE = 0V
5
3
2
10¹
7
Cies
5
3
2
10⁰
Coes
7
5
3
2
Cres
10^–1
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009
3