CM150TU-12F_09 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
300
Tj=25°C
250
VGE=20V
1511
10
9.5
200
9
150
8.5
100
50
8
7.5
0
0 _{0.5 1 1.5 2 2.5 3 3.5 4}
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 300A
2
IC = 150A
1
IC = 60A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10²
7
5
Cies
3
2
10¹
7
5
3
2
10⁰
7
5
3 _{VGE = 0V}
2
Coes
Cres
10^–₁¹_{0–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102}
COLLECTOR-EMITTER VOLTAGE VCE (V)
3
MITSUBISHI IGBT MODULES
CM150TU-12F
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
3
VGE = 15V
2.5
2
1.5
1
0.5
Tj = 25°C
Tj = 125°C
0
0
100
200
300
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7
5
Tj = 25°C
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
0 0.5 1 1.5 2 2.5 3 3.5 4
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
5
td(off)
3
2
tf
10²
7
td(on)
5
3
2
10¹
7
Conditions:
tr
VCC = 300V
5
VGE = ±15V
3
RG = 4.2Ω
2
Tj = 125°C
10⁰_{100 2 3 5 7101 2 3 5 7102 2 3 5 7103}
COLLECTOR CURRENT IC (A)
Feb. 2009