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| CM150DY-24H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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MITSUBISHI IGBT MODULES
CM150DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
300
15
Tj = 25oC
12
250
VGE = 20V
200
11
150
10
100
9
50
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 300A
6
IC = 150A
4
2
IC = 60A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7 tf
5
td(off)
3
2
td(on)
102
7
5
3
2
101
101
tr
23
5 7 102
VCC = 600V
VGE = ±15V
RG = 2.1â¦
Tj = 125°C
2 3 5 7 103
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
300
VCE = 10V
250
Tj = 25°C
Tj = 125°C
200
150
100
50
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
7 Tj = 25°C
5
3
2
102
7
5
3
2
101
1.0 1.5 2.0 2.5 3.0 3.5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
Irr
102
trr
101
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0 50 100 150 200 250 300
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
102
Cies
101
Coes
100
VGE = 0V
Cres
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 150A
16
VCC = 400V
VCC = 600V
12
8
di/dt = -300A/µsec
Tj = 25°C
101101
102
EMITTER CURRENT, IE, (AMPERES)
100
103
4
0
0 200 400 600 800 1000 1200
GATE CHARGE, QG, (nC)
Sep.1998
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