CM150DU-34KA_11 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
300
Tj = 25°C
12
11
250 ^{VGE = 20V}
15
200
10
14
150
9
100
50
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
6
VGE = 15V
5
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0 50 100 150 200 250 300
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
7 Tj = 25°C
5
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
3
MITSUBISHI IGBT MODULES
CM150DU-34KA
HIGH POWER SWITCHING USE
TRANSFER CHARACTERISTICS
(TYPICAL)
300
VCE = 10V
250
Tj = 25°C
Tj = 125°C
200
150
100
50
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
IC = 300A
4
IC = 150A
2
IC = 60A
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
10²
7
5
3
2
Cies
10¹
7
5
3
2
Coes
10⁰
7
5
Cres
3
2
VGE = 0V
10^–₁¹_{0–1 2 3 5 7 100 2 3}
5 7 10¹ 2 3
5 710²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009