CM1200HC-66H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2400
Tj = 25°C
VGE = 15V
2000 ^{VGE = 20V}
VGE = 14V
1600
VGE = 13V
VGE = 12V
VGE = 11V
VGE = 10V
1200
VGE = 9V
800
400
VGE = 8V
0
0
2
4
6
8
10
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
2400
2000
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
1600
1200
800
400
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE = 15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
4
2
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
7
5
Tj = 25°C
3
2
10³
7
5
3
2
10²
7
5
3
2
10¹
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE VS. VCE
(TYPICAL)
10³
7
5
3
2
10²
7
5
3
2
10¹
7
5
3 ^{VGE = 0V, Tj = 25°C}
2 ^{Cies, Coes : f = 100kHz}
Cres
: f = 1MHz
10⁰
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2001