CM1200HB-66H Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HB-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
2400
2000
1600
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 25°C
VGE = 14V
VGE = 15V
VGE = 20V
VGE = 13V
VGE = 12V
VGE = 11V
VGE = 10V
1200
800
VGE = 9V
400
VGE = 8V
VGE = 7V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
2400
2000
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
1600
1200
800
400
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE = 15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 2400A
6
IC = 1200A
4
2
IC = 480A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
8
6
4
2
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
EMITTER CURRENT IE (A)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
Cies
10²
7
5
3
2
10¹
Coes
7
5
3 ^{VGE = 0V, Tj = 25°C}
Cres
2 ^{Cies, Coes : f = 100kHz}
Cres
: f = 1MHz
10⁰
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003