CM1200HB-50H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HB-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2400
Tj=25°C
VGE=13V
2000 VGE=14V
VGE=12V
VGE=15V
1600
VGE=20V
VGE=11V _VGE=10V
1200
VGE=9V
800
400
VGE=8V
VGE=7V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
2400
VCE=10V
2000
1600
1200
800
400
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE=15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6
IC = 2400A
IC = 1200A
4
2
IC = 480A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
EMITTER CURRENT IE (A)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
Cies
10²
7
5
3
2
10¹
Coes
7
5
3 ^{VGE = 0V, Tj = 25°C}
2 ^{Cies, Coes : f = 100kHz}
Cres
Cres
: f = 1MHz
10⁰
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003