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CM10AD00-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE | |||
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ELECTRICAL CHARACTERISTICS (Tj = 25°C)
INVERTER PART
Symbol
Parameter
Test conditions
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th) Gate-emitter threshold voltage IC = 1.0mA, VCE = 10V
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
VEC(Note.1)
trr (Note.1)
Qrr (Note.1)
Rth(j-c)Q
Rth(j-c)R
Gate-emitter cutoff current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 150°C
IC = 10A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 300V, IC = 10A, VGE = 15V
VCC = 300V, IC = 10A
VGE1 = VGE2 = 15V
RG = 63â¦
Resistive load
IE = 10A, VGE = 0V
IE = 10A, VGE = 0V
diE / dt = â 20A / µs
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
BRAKE PART
Symbol
Parameter
Test conditions
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
VFM
Rth(j-c)Q
Rth(j-c)R
Gate-emitter threshold voltage IC = 1.0mA, VCE = 10V
Gate-emitter cutoff current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Thermal resistance
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 150°C
IC = 10A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 300V, IC = 10A, VGE = 15V
IF = 10A, Clamp diode part
IGBT part
Clamp diode part
CONVERTER PART
Symbol
Parameter
IRRM
V FM
Rth(j-c)
Repetitive reverse current
Forward voltage drop
Thermal resistance
Test conditions
VR = VRRM, Tj = 150°C
IF = 10A
Per 1/6 module
MITSUBISHI IGBT MODULES
CM10AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
Min.
â
4.5
â
â
(Note.4)
â
â
â
â
â
â
â
â
â
â
â
â
â
â
Limits
Typ.
â
6
â
2.1
2.15
â
â
â
30
â
â
â
â
â
â
0.03
â
â
Max.
1
7.5
0.5
2.8
â
1.0
0.9
0.2
â
120
300
200
300
2.8
110
â
3.1
4.9
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
°C/W
°C/W
Min.
â
4.5
â
â
(Note.4)
â
â
â
â
â
â
â
â
Limits
Typ.
â
6
â
2.1
2.15
â
â
â
30
â
â
â
Max.
1
7.5
0.5
2.8
â
1.0
0.9
0.2
â
2.8
3.2
5.0
Unit
mA
V
µA
V
nF
nF
nF
nC
V
°C/W
°C/W
Limits
Min.
Typ.
Max. Unit
â
â
8 mA
â
â
1.5
V
â
â
3.1 °C/W
Sep. 2000
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