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| CM100TU-24H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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MITSUBISHI IGBT MODULES
CM100TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
200
Tj = 25oC
15
12
VGE = 20V
160
11
120
10
80
9
40
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 200A
6
IC = 100A
4
2
IC = 40A
0
0
4
8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
VCC = 600V
VGE = ±15V
RG = 3.1 â¦
Tj = 125°C
102
td(off)
tf
td(on)
101
tr
100
100
101
COLLECTOR CURRENT, IC, (AMPERES)
102
TRANSFER CHARACTERISTICS
(TYPICAL)
200
VCE = 10V
Tj = 25°C
160
Tj = 125°C
120
80
40
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 10V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0 40 80 120 160 200
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
102
VGE = 0V
101
Cies
102
100
Coes
101
1.0 1.5 2.0 2.5 3.0 3.5 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
di/dt = -200A/µsec
Tj = 25°C
trr
102
101
Irr
Cres
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 100A
16
VCC = 400V
12
VCC = 600V
8
101
100
101
EMITTER CURRENT, IE, (AMPERES)
100
102
4
0
0 100 200 300 400 500
GATE CHARGE, QG, (nC)
Sep.1998
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