CM100RL-12NF Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM100RL-12NF
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
INVERTER PART
Symbol
Parameter
Test conditions
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th) Gate-emitter threshold voltage IC = 10mA, VCE = 10V
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
RG
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
Contact thermal resistance
External gate resistance
VGE = VGES, VCE = 0V
IC = 100A, VGE = 15V
Tj = 25°C
Tj = 125°C
VCE = 10V
VGE = 0V
VCC = 300V, IC = 100A, VGE = 15V
VCC = 300V, IC = 100A
VGE1 = VGE2 = 15V
RG = 6.3Ω, Inductive load switching operation
IE = 100A
IE = 100A, VGE = 0V
IGBT part (1/6 module)^*1
FWDi part (1/6 module)^*1
Case to fin, Thermal compound Applied (1/6 module)^*2
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.3
Limits
Typ.
—
7
—
1.7
1.7
—
—
—
400
—
—
—
—
—
2.1
—
—
—
0.085
—
Max.
1
8
0.5
2.2
—
15
1.9
0.6
—
120
100
300
300
120
—
2.8
0.23
0.41
—
63
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
Ω
BRAKE PART
Symbol
Parameter
Test conditions
Min.
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
VGE(th) Gate-emitter threshold voltage IC = 5.0mA
6
IGES
Gate leakage current
VGE = VGES, VCE = 0V
—
Tj = 25°C
—
VCE(sat) Collector-emitter saturation voltage IC = 50A, VGE = 15V
Tj = 125°C
—
Cies
Input capacitance
—
Coes
Output capacitance
VCE = 10V
—
Cres
Reverse transfer capacitance ^{VGE = 0V}
—
QG
Total gate charge
VCC = 300V, IC = 50A, VGE = 15V
—
VFM
Forward voltage drop
IF = 50A
—
Rth(j-c)Q _{Thermal resistance}
IGBT part^*1
—
Rth(j-c)R
Clamp diode part^*1
—
RG
External gate resistance
13
*^{1 : Tc measured point is just under the chips.}
If you use this value, Rth(f-a) should be measured just under the chips.
*^{2 : Typical value is measured by using Shin-etsu Silicone “G-746”.}
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
Limits
Typ.
—
7
—
1.7
1.7
—
—
—
200
—
—
—
—
Max.
1
8
0.5
2.2
—
7.5
1.0
0.3
—
2.8
0.39
0.70
130
Unit
mA
V
µA
V
nF
nF
nF
nC
V
°C/W
°C/W
Ω
Jun. 2004