CM100E3U-24H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM100E3U-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT
–
Thermal Resistance, Junction to Case
R_th(j-c)D
Per FWDi
–
Thermal Resistance, Junction to Case
R_th(j-c)
Clamp Diode Part
–
Contact Thermal Resistance
R_th(c-f)
Per Module, Thermal Grease Applied
–
Typ.
–
–
–
0.035
Max.
0.19
0.35
0.35
–
Units
°C/W
°C/W
°C/W
°C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
200
T_j = 25^oC
15
12
V_GE = 20V
160
11
120
10
80
9
40
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 200A
6
I_C = 100A
4
2
I_C = 40A
0
0
4
8 12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
V_CE = 10V
T_j = 25°C
160
T_j = 125°C
120
80
40
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
10²
10¹
1.0 1.5 2.0 2.5 3.0 3.5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0 40 80 120 160 200
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
V_CE
10²
V_GE = 0V
10¹
C_ies
C_oes
10⁰
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
Sep.1998