 English |
|
|
|
|
|
|
|
| CM100DY-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
| |||
| ◁ |
MITSUBISHI IGBT MODULES
CM100DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
200
Tj = 25oC
VGE = 20V
12
15
150
11
100
10
50
9
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 200A
6
IC = 100A
4
2
IC = 40A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7 Tj = 125°C
5
tf
3
td(off)
2
102
td(on)
7
5
3
2
101
100
23
tr
5 7 101
VCC = 300V
VGE = ±15V
RG = 6.3â¦
2 3 5 7 102
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
VCE = 10V
Tj = 25°C
150
Tj = 125°C
100
50
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0
50
100
150
200
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
102
101
Cies
102
Coes
100
101
0
0.8 1.6 2.4 3.2 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
âdi/dt = 200A/µs
7 Tj = 25°C
7
5
5
3
3
2
2
102
trr 101
7
7
5
lrr 5
3
3
2
2
101
100
100
2 3 5 7 101 2 3 5 7 102
EMITTER CURRENT, IE, (AMPERES)
VGE = 0V
10-1
10-1
100
Cres
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 100A
16
VCC = 200V
12
VCC = 300V
8
4
0
0 100 200 300 400 500
GATE CHARGE, QG, (nC)
Sep.1998
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese